Chinese scientists have successfully developed a new technique for the mass production of high-quality “golden semiconductor” indium selenide, paving the way for a new generation of advanced chips that could surpass silicon-based technology. The study, published in Science, was conducted by researchers from Peking University and Renmin University of China.
As the performance of silicon chips nears its physical limit, global efforts have intensified to discover high-performance, low-energy alternatives. Indium selenide, dubbed the “golden semiconductor”, holds major potential, but large-scale, high-quality production has been a key hurdle due to the difficulty in maintaining the precise 1:1 atomic ratio of indium and selenium during synthesis.
The research team overcame this challenge by applying a new method: heating amorphous indium selenide film alongside solid indium in sealed conditions. The process created an indium-rich liquid interface at the film’s edge, which gradually formed well-ordered indium selenide crystals.
Professor Liu Kaihui from Peking University explained that this technique ensures the perfect atomic balance, making large-scale engineering applications possible. The team produced 5cm-wide indium selenide wafers and built high-performance transistor arrays ready for integration into next-gen chip devices.
This innovation not only breaks through a long-standing production barrier but also opens a scalable route for manufacturing next-generation chips designed for artificial intelligence, autonomous vehicles, and smart devices. Reviewers of Science called the work “an advancement in crystal growth,” highlighting its importance for the future of semiconductor development.
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